Device doping
Doping in this device is represented by moving the position of the Fermi level relative to the conduction band or valence band
Nanoskim
Quantum transport computing software for tight-bound models
Nanoskim is a quantum transport simulation software based on the Slater-Koster tight-bound potential field, which can construct nanodevices at the atomic level. Under non-equilibrium conditions, the electron density and electrostatic potential of nanodevices are obtained by autonomously solving the Non-lequilibrium Green's function (NEGF) and the Poisson equation. Thus, quantum mechanical effects (such as source-leak tunneling effect, quantum confinement effect, electro-acoustic coupling effect) can be fully considered, as well as specific atomic details (such as cross-sectional shape, impurity location), etc.
Main Functions
Support the Slater-Koster parameter for transport calculation
The SlaterKoster parameters provided by the sister program Nanoskif software can be applied to calculate the properties of electronic transport
Support RESCU Hamiltonian for transport calculation
Based on the Hamiltonian of the RESCU program, the Hamiltonian of the transport system is constructed in a particularly holistic manner. This way, the SlaterKoster parameter is not relied on, and the effects of interfaces and surfaces can be considered more accurately
The momentum field and the leading edge
It is possible to view the potential field input and output in some self-consistent steps, and at the same time, an animated video file can be generated for the self-consistent potential field
Charge density distribution
The type of charge density distribution and the direction of the cross-section can be flexibly selected, and it supports displaying the charge density distribution of all cross-sections along a certain direction in sequence with animations
Projected density of states/local density of states
It can simulate and calculate the projected density of states and local density of states of the system, and can perform energy broadening and smoothing processing on the data
I-V curve
The program can automatically generate a series of bias voltage and gate voltage folders, and quickly obtain the transfer characteristic curves and output characteristic curves of current and voltage
Electron transmission spectrum
Both effective transmission spectra and general transmission spectra can be obtained
Electron-Phonon Coupling
The program can achieve transport calculation under electro-acoustic coupling by adding Buttiker virtual wires
Application Cases
Ring-gate type silicon nanowire transistors
Based on the annular gate silicon nanowire device (GAA-MOSFET) with a diameter of approximately 2 nm and a length of 30 nm, the bandedge relationship and current transfer characteristics were simulated and calculated.
The influence of electro-acoustic coupling on the transport properties of devices
Based on the 20 nm NIN-type silicon nanowire device, the projected density of states and the current transfer characteristics under different virtual conductors are simulated and calculated. Among them, the red line represents the non-virtual conductor, the light blue line represents the overall virtual conductor, the green line represents the mixed virtual conductor, and the dark blue line represents the independent virtual conductor.
